note: 1. *1 50 hz sine wave 1c y cle ( non-re p etitive p eak current ) note: 1. measuring methods are based on japanese industrial standard jis c 7031 measuring methods for diodes. 2. a bsolute fre q uenc y of in p ut and out p ot is 10 mh z 3. *1 r-load trr test circuit ma g a g ine 50 p cs forward voltage vf electrical characteristics ta = 25 c3 c parameter symbol conditions if = 0.5 a, vr = 1.0 a irrm semiconductor company, panasonic corporation 2009.10.28 2010.8.31 prepared revised tentative DA2DF62 total pages page non-repetitive peak peak reverse voltage vrsm 600 v repetitive peak reverse voltage vrrm 600 v forward current DA2DF62 silicon epitaxial planar type for high frequency rectification marking symbol : DA2DF62 absolute maximum ratings ta = 25 c parameter symbol rating unit a if(av) 10 ta = 25 c c junction temperature tj storage temperature tstg to +150 themal resistance themal resistance rth(j-c) rth(j-a) a reverse current 10 vrrm = 600 v v if = 10 a 1.4 1.7 c / w 150 4.0 63 c min ifsm 40 a c / w typ max 25 40 unit packing ns trr package code : to-220d-b1 irr = 0.25 a -40 reverse recovery time *1 non-repetitive peak forward surge current *
to-220d-b1 unit: mm 1.5 +0 - 0.4 4.2 0.2 13.7 0.2 15.0 0.5 2.9 0.2 2.6 0.1 0.40 0.05 4.6 0.2 9.9 0.3 1.4 0.2 0.8 0.1 2.54 0.3 5.08 0.5 1 2 3.0 0.5 f3.2 0.1
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